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HAT1038R, HAT1038RJ
Silicon P Channel Power MOS FET High Speed Power Switching
REJ03G1150-0500 (Previous: ADE-208-663C) Rev.5.00 Sep 07, 2005
Features
* * * * For Automotive Application (at Type Code "J") Low on-resistance Capable of 4 V gate drive High density mounting
Outline
RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 )
78 DD 56 DD
65 87 3 12 4
2 G
4 G
1, 3 2, 4 5, 6, 7, 8
Source Gate Drain
S1 MOS1
S3 MOS2
Rev.5.00 Sep 07, 2005 page 1 of 7
HAT1038R, HAT1038RJ
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel dissipation Channel temperature Storage temperature Notes: 1. 2. 3. 4. HAT1038R HAT1038RJ HAT1038R HAT1038RJ Symbol VDSS VGSS ID ID (pulse) IDR IAP EAR
Note 1
Value -60 20 -3.5 -28 -3.5 -- -3.5 -- 1.05 2 3 150 -55 to +150
Unit V V A A A -- A -- mJ W W C C
Note 4
Note 4
Pch Note 3 Pch Tch Tstg
Note 2
PW 10 s, duty cycle 1% 1 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10 s 2 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10 s Value at Tch = 25C, Rg 50
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Gate to source leak voltage Gate to source leak current Zero gate voltage drain current Zero gate voltage drain current HAT1038R HAT1038RJ HAT1038R HAT1038RJ Symbol V (BR) DSS V (BR) GSS IGSS IDSS IDSS IDSS IDSS VGS (off) RDS (on) RDS (on) |yfs| Ciss Coss Crss td (on) tr td (off) tf VDF trr Min -60 20 -- -- -- -- -- -1.2 -- -- 3 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- -- -- -- 0.12 0.16 4.5 600 290 75 11 30 100 55 -0.98 70 Max -- -- 10 -1 -0.1 -- -10 -2.2 0.15 0.23 -- -- -- -- -- -- -- -- -1.28 -- Unit V V A A A A A V S pF pF pF ns ns ns ns V ns Test Conditions ID = -10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = -60 V, VGS = 0 VDS = -48 V, VGS = 0 Ta = 125C VDS = -10 V, ID = -1 mA Note 5 ID = -2 A, VGS = -10 V ID = -2 A, VGS = -4 V Note 5 ID = -2 A, VDS = -10 V VDS = -10 V VGS = 0 f = 1 MHz VGS = -10 V, ID = -2 A, VDD -30 V
Note 5
Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 5. Pulse test
IF = -3.5 A, VGS = 0 IF = -3.5 A, VGS = 0 diF/dt = 50 A/s
Note 5
Rev.5.00 Sep 07, 2005 page 2 of 7
HAT1038R, HAT1038RJ
Main Characteristics
Power vs. Temperature Derating
4.0
Maximum Safe Operation Area
-100 -30
10 s
Pch (W)
ID (A)
Test Condition: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10 s
3.0
-10 -3 -1 -0.3 -0.1
10
DC
0
Channel Dissipation
2.0
1 Dr
1.0
ive
Op er
at
ion
Drain Current
PW s = Op 10 era ms tio n( Operation in PW N o 1 te 6 this area is 0s limited by RDS (on) )
1m
s
2 Dr ive ion at er Op
0 0 50 100 150 200
-0.03 Ta = 25C 1 shot pulse -0.01 -1 -0.1 -0.3
-3
-10
-30
-100
Ambient Temperature
Ta (C)
Drain to Source Voltage VDS (V)
Note 6: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm)
Typical Output Characteristics
-10 -10 V -5 V -4 V -10 -3.5 V Pulse Test -6
Typical Transfer Characteristics
ID (A)
ID (A)
-8
-8
VDS = 10 V Pulse Test
-6 -3 V
Drain Current
-4
Drain Current
-4 Tc = 75C -2 -25C 0 0 25C
-2
VGS = -2.5 V
0 0 -2 -4 -6 -8 -10
-1
-2
-3
-4
-5
Drain to Source Voltage
VDS (V)
Gate to Source Voltage
VGS (V)
Drain to Source Saturation Voltage vs. Gate to Source Voltage
Drain to Source on State Resistance RDS (on) () Drain to Source Saturation Voltage VDS (on) (V)
-0.5 Pulse Test
Static Drain to Source on State Resistance vs. Drain Current
1 Pulse Test 0.5 VGS = -4 V -10 V
-0.4
-0.3 ID = -2 A -0.2 -1 A -0.1 -0.5 A
0.2 0.1 0.05
0.02 0.01 -0.1 -0.3
0
0
-4
-8
-12
-16
-20
-1
-3
-10
-30
-100
Gate to Source Voltage
VGS (V)
Drain Current
ID (A)
Rev.5.00 Sep 07, 2005 page 3 of 7
HAT1038R, HAT1038RJ
Static Drain to Source on State Resistance vs. Temperature
Forward Transfer Admittance |yfs| (S)
0.5 Pulse Test 0.4 ID = -2 A 0.3 -0.5 A 0.2 VGS = -4 V -2 A 0.1 -10 V 0 -40 0 40 80 120 160 -0.5 A, -1 A -1 A 20 10 Tc = -25C 5 25C 2 1 0.5 VDS = 10 V Pulse Test 0.2 -0.1 -0.2 -0.5 -1 -2 -5 -10 75C
Static Drain to Source on State Resistance RDS (on) ()
Forward Transfer Admittance vs. Drain Current
Case Temperature
Tc (C)
Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage
2000 1000 VGS = 0 f = 1 MHz Ciss 500 200 100 50 20 10 0 -10 -20 -30 -40 -50 Crss Coss
Body-Drain Diode Reverse Recovery Time
500
Reverse Recovery Time trr (ns)
100 50
20 10 5 -0.1 -0.2 di / dt = 50 A / s VGS = 0, Ta = 25C -0.5 -1 -2 -5 -10
Capacitance C (pF)
200
Reverse Drain Current
IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
VDS (V)
VDD = -10 V -25 V -50 V VGS -40 VDS VDD = -50 V -25 V -10 V -8
Switching Characteristics
VGS (V)
0 1000 300 td(off) 100 tf 30 10 3 V = -10 V, V = -30 V GS DD PW = 5 s, duty 1 % 1 -0.1 -0.2 -0.5 -1 -2 tr td(on)
0
-20
-4
Drain to Source Voltage
-60
-12
-80 ID = -3.5 A 0 8 16 24 32
-16
-100
-20 40
Gate to Source Voltage
Switching Time t (ns)
-5
-10
Gate Charge
Qg (nc)
Drain Current
ID (A)
Rev.5.00 Sep 07, 2005 page 4 of 7
HAT1038R, HAT1038RJ
Reverse Drain Current vs. Source to Drain Voltage
-10
Repetitive Avalanche Energy EAR (mJ)
Maximum Avalanche Energy vs. Channel Temperature Derating
2.5 IAP = -3.5 A VDD = -25 V L = 100 H duty < 0.1 % Rg 50
Reverse Drain Current IDR (A)
-8
2.0
-6
-10 V VGS = 0, 5 V -5 V
1.5
-4
1.0
-2 Pulse Test 0 0 -0.4 -0.8 -1.2 -1.6 -2.0
0.5
0 25
50
75
100
125
150
Source to Drain Voltage
VSD (V)
Channel Temperature Tch (C)
Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)
Normalized Transient Thermal Impedance s (t)
10
1
D=1 0.5
0.1
0.2
0.1
0.05
0.02 0.01
ch - f (t) = s (t) * ch - f ch - f = 125C/W, Ta = 25C When using the glass epoxy board (FR4 40 x 40 x 1.6 mm)
0.01
0.001
1s
ho
tp
e uls
PDM PW T 1m 10 m 100 m 1 10 100
D=
PW T
0.0001 10
100
1000
10000
Pulse Width PW (S) Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)
Normalized Transient Thermal Impedance s (t)
10
1
D=1 0.5
0.1
0.2
0.1
0.05
0.02 0.01
ch - f (t) = s (t) * ch - f ch - f = 166C/W, Ta = 25C When using the glass epoxy board (FR4 40 x 40 x 1.6 mm)
0.01
0.001
1s
ho
tp
e uls
PDM PW T 1m 10 m 100 m 1 10 100
D=
PW T
0.0001 10
100
1000
10000
Pulse Width PW (S)
Rev.5.00 Sep 07, 2005 page 5 of 7
HAT1038R, HAT1038RJ
Avalanche Test Circuit Avalanche Waveform 1 * L * IAP2 * 2 VDSS VDSS - VDD
V(BR)DSS IAP D.U.T VDD ID Vin -15 V 50 VDD VDS
VDS Monitor
L IAP Monitor
EAR =
Rg
0
Switching Time Test Circuit
Vin Vin Monitor D.U.T. RL Vout Monitor
Switching Time Waveform
10% 90% 90% 90%
Vin -10 V
50
VDD = -30 V Vout td(on) 10% tr td(off) 10% tf
Rev.5.00 Sep 07, 2005 page 6 of 7
HAT1038R, HAT1038RJ
Package Dimensions
JEITA Package Code P-SOP8-3.95 x 4.9-1.27 RENESAS Code PRSP0008DD-D Package Name FP-8DAV MASS[Typ.] 0.085g
*1 D
F
8
5
*2 E HE
bp
Index mark
1
Z e
4
*3 bp xM
c
Terminal cross section (Ni/Pd/Au plating)
NOTE) 1. DIMENSIONS "*1(Nom)" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET.
Reference Symbol
Dimension in Millimeters Min Nom 4.90 3.95 Max 5.3
L1
D E A2 A1 A 0.10
0.14
0.25 1.75
A
bp b1
0.34
0.40
0.46
A1
c
0.15
0.20
0.25
L
c1 0 HE 5.80 6.10 1.27 0.25 0.1 0.75 0.40 0.60 1.08 1.27 8 6.20
y
Detail F
e x y Z L L1
Ordering Information
Part Name HAT1038R-EL-E HAT1038RJ-EL-E 2500 pcs 2500 pcs Quantity Taping Taping Shipping Container
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.5.00 Sep 07, 2005 page 7 of 7
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
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http://www.renesas.com
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(c) 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .3.0

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